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Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress

✍ Scribed by E. Miranda; J. Molina; Y. Kim; H. Iwai


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
368 KB
Volume
45
Category
Article
ISSN
0026-2714

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Schottky barrier SOI-MOSFETs with high-k
✍ C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. StΓΆger-Pollach; E. πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 725 KB

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameter