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Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

✍ Scribed by C. Henkel; S. Abermann; O. Bethge; G. Pozzovivo; P. Klang; M. Stöger-Pollach; E. Bertagnolli

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 725 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.11.003

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✦ Synopsis

Schottky barrier SOI-MOSFETs incorporating a La(2)O(3)/ZrO(2) high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N'-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 10(11) eV(-1) cm(-2), a low subthreshold slope of 70-80 mV/decade, and an I(ON)/I(OFF) current ratio greater than 2 × 10(6) are obtained.

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