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Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

โœ Scribed by S. Abermann; C. Henkel; O. Bethge; G. Pozzovivo; P. Klang; E. Bertagnolli

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
671 KB
Volume
256
Category
Article
ISSN
0169-4332

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k oxides on the hydroxylated and sulfur-passivated GaAs(1 0 0) surface will be intensively compared theoretically.