Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

✍ Scribed by Jie Ren; Guangfen Zhou; Yongqi Hu; Haichao Jiang; David Wei Zhang

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 758 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.05.237

✦ Synopsis

k oxides on the hydroxylated and sulfur-passivated GaAs(1 0 0) surface will be intensively compared theoretically.