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Electrical characterization of high-k gate dielectrics on semiconductors

โœ Scribed by T.P. Ma


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
531 KB
Volume
255
Category
Article
ISSN
0169-4332

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Performance of current mirror with high-
โœ F. Crupi; P. Magnone; A. Pugliese; G. Cappuccino ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 261 KB

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It