Band offsets of high K gate oxides on high mobility semiconductors
β Scribed by J. Robertson; B. Falabretti
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 300 KB
- Volume
- 135
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A detailed analysis of the band alignment between atomic-layer deposition (ALD)grown HfO 2 thin films and n-type Ge(1 0 0) substrate is presented. The valence band offset (VBO) is determined by X-ray photoelectron spectroscopy (XPS) after careful evaluation of the experimental data and accurate remo
HfO 2 and SrTiO 3 films were grown on silicon by liquid injection metal organic chemical vapour deposition. The microstructure and structure of the films were characterised by X-ray and electron diffraction, X-ray reflectometry, infrared spectroscopy, and microscopy techniques. In both cases, we emp