Charge trapping in ultrathin Gd2O3 high-k dielectric

✍ Scribed by A.N. Nazarov; Y.V. Gomeniuk; Y.Y. Gomeniuk; H.D.B. Gottlob; M. Schmidt; M.C. Lemme; M. Czernohorsky; H.J. Osten

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 509 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.136

✦ Synopsis

Charge trapping in ultrathin high-k Gd 2 O 3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the dielectric layer, resulting in the respective shift of the C-V curve. The capture cross-section of the hole traps is around 2×10 -20 cm 2 . The distribution of the interface states was measured by conductance technique showing the concentration up to 7.5×10 12 eV -1 cm -2 near the valence band edge.