Charge trapping in ultrathin high-k Gd 2 O 3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the diele
Charge trapping at Pt/high-k dielectric (Ta2O5) interface
β Scribed by L. Stojanovska-Georgievska; N. Novkovski; E. Atanassova
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 504 KB
- Volume
- 406
- Category
- Article
- ISSN
- 0921-4526
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