✦ LIBER ✦
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys
✍ Scribed by Robert S Johnson; Gerald Lucovsky; Joon Goo Hong
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 176 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
Characterization by Auger electron spectroscopy, AES, and Fourier transformation infrared spectroscopy, FTIR, confirm that (Ta O ) (Al O ) alloys are homogeneous with pseudo-binary in character, and display increased thermal stability. 2 5 x 2 3 12x Capacitance-voltage, C-V, and current density-voltage, J-V, data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta O with 2 5
respect to Si.