Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000 °C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

✍ Scribed by W.S. Lau; P.W. Qian; Taejoon Han; Nathan P. Sandler; S.T. Che; S.E. Ang; C.H. Tung; T.T. Sheng

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 178 KB
• Volume: 47
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2006.05.018