✦ LIBER ✦

Characterisation of charge trapping at the Si–SiO2 (100) interface using high-temperature conductance spectroscopy

✍ Scribed by E Duval; E Lheurette

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 742 KB
Volume: 65
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(02)00732-3

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✦ Synopsis

We report an experimental study of interface silicon trivalent defects on (100) oriented MOS structures. Considering the surface potential fluctuations, high-temperature conductance spectroscopy is used to detect acceptor and donor trap energy levels on N-and P-type devices, respectively, and to measure their capture cross-sections. The trap levels values are confirmed by a UV-assisted capacitance analysis. The capture cross-sections show very good agreement with published data deduced from different experimental methods. Our results confirm the capability of high-temperature conductance spectroscopy for interface defects characterisation.

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