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Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels

✍ Scribed by M. El-Sayed; G. Pananakakis; G. Kamarinos


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
900 KB
Volume
28
Category
Article
ISSN
0038-1101

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