✦ LIBER ✦
Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure
✍ Scribed by S.K. Ray; R. Mahapatra; S. Maikap; A. Dhar; D. Bhattacharya; Je-Hun Lee
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 648 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1369-8001
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