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Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter

โœ Scribed by R Kalyanaraman; T.E Haynes; M Yoon; B.C Larson; D.C Jacobson; H.-J Gossmann; C.S Rafferty


Book ID
114164593
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
153 KB
Volume
175-177
Category
Article
ISSN
0168-583X

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