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High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

✍ Scribed by J.H Evans-Freeman; A.R Peaker; I.D Hawkins; P.Y.Y Kan; J Terry; L Rubaldo; M Ahmed; S Watts; L Dobaczewski

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 129 KB
Volume: 3
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(00)00038-x

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