Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

✍ Scribed by M.D.H. Lay; J.C. McCallum; C. Jagadish

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 205 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.150

✦ Synopsis

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 À ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and various tilts from the [1 0 0] direction then implanted with 600 keV P to a dose of 5 Â 10 8 cm À2 . The peak depth of the VP/V 2 À profile exhibits a systematic variation with the implantation angle: narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. The defect profiles are approximately 0.3 mm deeper than the peak in the vacancy profile predicted using the binary collision code Crystal-TRIM. Surface-enhanced annihilation of migrating defects has been considered as the cause of this.