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Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

✍ Scribed by R. Harding; G. Davies; P.G. Coleman; C.P. Burrows; J. Wong-Leung

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 212 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.152

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