𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy

✍ Scribed by R.S. Brusa; S. Mariazzi; L. Ravelli; P. Mazzoldi; G. Mattei; W. Egger; C. Hugenschmidt; B. Löwe; P. Pikart; C. Macchi; A. Somoza


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
716 KB
Volume
268
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

✦ Synopsis


Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass.


📜 SIMILAR VOLUMES


Depth profiled porosity and microstructu
✍ C. Macchi; G. Mariotto; G.P. Karwasz; A. Zecca; M. Bettonte; R.S. Brusa 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 279 KB

The 3g annihilation of ortho-positronium and the Doppler broadening of the positron annihilation line have been measured by implanting low-energy positrons in low dielectric constant (low-k) SiOCH films. Positron techniques were used to gather information about the porosity while Raman scattering wa

The formation and evolution of vacancy-t
✍ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi