Microvoids and defect chemistry at the SiSiO2 interface studied by positron annihilation depth profiling

✍ Scribed by G.W Rubloff; B Nielsen; K.G Lynn; D.O Welch; T.C Leung

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 308 KB
• Volume: 41
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(90)93785-h