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Microvoids and defect chemistry at the Si-SiO2 interface studied by positron annihilation depth profiling : G. W. A. Rubloff, B. Nielsen, K. G. Lynn, D. O. Welch and T. C. Leung. Vacuum 41(4), 790 (1990)


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
127 KB
Volume
31
Category
Article
ISSN
0026-2714

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