The formation and evolution of vacancy-t
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B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L.
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Article
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2009
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Elsevier Science
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English
โ 254 KB
The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi