Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

✍ Scribed by T. Ohshima; A. Uedono; K. Abe; H. Itoh; Y. Aoki; M. Yoshikawa; S. Tanigawa; I. Nashiyama

• Publisher: Springer
• Year: 1998
• Tongue: English
• Weight: 209 KB
• Volume: 67
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s003390050794