Characterization of n-type layers formed in (11–20)-4H–SiC by phosphorus ion implantation

✍ Scribed by N. Yanagida; K. Ishibashi; S. Uchiumi; T. Inada

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 455 KB
• Volume: 257
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.01.241