Characterization of deep levels in n-type 4H-SiC single crystals by means of a piezoelectric photothermal and a photoluminescence spectroscopy

✍ Scribed by K. Sakai; S. Tada; A. Fukuyama; T. Ikari

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 184 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.051