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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

✍ Scribed by D.F. Storm; D.S. Katzer; D.A. Deen; R. Bass; D.J. Meyer; J.A. Roussos; S.C. Binari; T. Paskova; E.A. Preble; K.R. Evans

Book ID: 108271810
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 412 KB
Volume: 54
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.05.041

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