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Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

✍ Scribed by Poblenz, C.; Waltereit, P.; Rajan, S.; Heikman, S.; Mishra, U. K.; Speck, J. S.


Book ID
121884081
Publisher
AVS (American Vacuum Society)
Year
2004
Tongue
English
Weight
378 KB
Volume
22
Category
Article
ISSN
0734-211X

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