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ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

✍ Scribed by Sh. HUSSEIN, A.; HASSAN, Z.; HASSAN, H. ABU; THAHAB, S. M.

Book ID: 118007642
Publisher: World Scientific Publishing Company
Year: 2010
Tongue: English
Weight: 211 KB
Volume: 09
Category: Article
ISSN: 0219-581X
DOI: 10.1142/s0219581x10006776

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