✦ LIBER ✦

Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures

✍ Scribed by C. Chen; D.J. Chen; Z.L. Xie; P. Han; R. Zhang; Y.D. Zheng; Z.H. Li; G. Jiao; T.S. Chen

Publisher: Springer
Year: 2007
Tongue: English
Weight: 273 KB
Volume: 90
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-007-4301-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface Passivation of AlGaN/GaN Heteros

Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

✍ Ootomo, S. ;Hashizume, T. ;Hasegawa, H. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 1 views

The influence of the 1st AlN and the 2nd

The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure

✍ Yang Bi; XiaoLiang Wang; CuiBai Yang; HongLing Xiao; CuiMei Wang; EnChao Peng; D 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 385 KB

The Effect of Surface Passivation and Il

The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs

✍ Ansell, B.J. ;Harrison, I. ;Foxon, C.T. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 144 KB 👁 2 views

Simulation on the effect of non-uniform

Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

✍ M.A. Mastro; J.R. LaRoche; N.D. Bassim; C.R. Eddy Jr. 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 667 KB

The properties of AlGaN films and AlGaN/

The properties of AlGaN films and AlGaN/GaN heterostructures grown on ((11ar{2}0)) sapphire substrates

✍ Wei-Tsai Liao; Jyh-Rong Gong; Shih-Wei Lin; Cheng-Liang Wang; Keh-Chang Chen; Je 📂 Article 📅 2006 🏛 Springer US 🌐 English ⚖ 221 KB

The effects of adjacent dislocations on

The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots

✍ A.D Andreev; J.R Downes; E.P O'Reilly 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 123 KB

We present a theory of the electronic energy levels and wave functions within GaN quantum dots (QDs), including the e ect of the strain ÿeld of a nearby dislocation and a full treatment of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using a plane-wa