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Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

✍ Scribed by Guo, Han; Tang, Wu; Zhou, Wei; Li, Chi Ming


Book ID
120418403
Publisher
Trans Tech Publications Inc.
Year
2012
Tongue
English
Weight
235 KB
Volume
217-219
Category
Article
ISSN
1660-9336

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera

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