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Electrical and Optical Characterization of AlGaN/GaN HEMTs withIn

✍ Scribed by Marko J. Tadjer; Travis J. Anderson; Karl D. Hobart; Michael A. Mastro; Jennifer K. Hite; Joshua D. Caldwell; Yoosuf N. Picard; Fritz J. Kub; Charles R. Eddy

Book ID: 107457023
Publisher: Springer US
Year: 2010
Tongue: English
Weight: 681 KB
Volume: 39
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-010-1343-9

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high‐tempera