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Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

✍ Scribed by M. Faqir; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso; E. Zanoni; A. Cavallini; A. Castaldini; N. Labat; A. Touboul; C. Dua


Book ID
108210723
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
170 KB
Volume
47
Category
Article
ISSN
0026-2714

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Post-annealing effects on trapping behav
✍ Kim, H. ;Lee, J. ;Lu, W. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB

## Abstract Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage (__I__–__V__) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trap