## Abstract Trapping effects in AlGaN/GaN highβelectron mobility transistors (HEMTs) are investigated using dynamic currentβvoltage (__I__β__V__) measurements with different quiescent biases and pulse widths to examine postβannealing effects after Schottky gate formation. The results show that trap
β¦ LIBER β¦
Buffer-trapping effects on current slump in AlGaN/GaN HEMTs
β Scribed by Atsushi Nakajima; Kazushige Horio
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 313 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0957-4522
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