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Post-annealing effects on trapping behaviors in AlGaN/GaN HEMTs

✍ Scribed by Kim, H. ;Lee, J. ;Lu, W.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
113 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage (I–V) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trapping/detrapping phenomena by traps with emission/capture time constants of shorter than 10 µs are dominant in non‐annealed devices. The devices annealed at 400 °C for 10 minutes in a furnace exhibit significantly smaller current dispersion and have a smaller number of traps. However, after post‐annealing, a small number of traps with a time constant of longer than 10 µs are created or activated. Further annealing at 400 °C leads to increase in current dispersion, indicating that more traps with an emission time constant >10 ms are created. These traps induced by post‐annealing are responsible for the trapping effects when pulse width ≥10 µs. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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