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Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

✍ Scribed by Bouya, M.; Malbert, N.; Labat, N.; Carisetti, D.; Perdu, P.; Clément, J.C.; Lambert, B.; Bonnet, M.

Book ID
108210782
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
282 KB
Volume
48
Category
Article
ISSN
0026-2714

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✍ Kim, H. ;Lee, J. ;Lu, W. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB

## Abstract Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage (__I__–__V__) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trap