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Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

✍ Scribed by M. Faqir; M. Bouya; N. Malbert; N. Labat; D. Carisetti; B. Lambert; G. Verzellesi; F. Fantini


Book ID
108210879
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
370 KB
Volume
50
Category
Article
ISSN
0026-2714

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Numerical simulation of novel ultrathin
✍ P. Tasli; B. Sarikavak; G. Atmaca; K. Elibol; A.F. Kuloglu; S.B. Lisesivdin πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 373 KB

The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/In x Al 1 Γ€ x N/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-lin