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An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect

✍ Scribed by Xiaoxu Cheng; Miao Li; Yan Wang

Book ID: 108271757
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 459 KB
Volume: 54
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2009.09.026

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## Abstract A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and accurately predicts the output conductance arising from the channel length modulation. The effects of spontaneous