Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses
✍ Scribed by P. Tasli; B. Sarikavak; G. Atmaca; K. Elibol; A.F. Kuloglu; S.B. Lisesivdin
- Book ID
- 104081665
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 373 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/In x Al 1 À x N/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schr ödinger-Poisson equations. The calculations include polarization-induced carriers and thermally activated bulk carriers. Important increments in carrier density are found with increasing thickness and decreasing indium-mole fraction of In x Al 1 À x N ultrathin barrier layer. From an experimental point of view, two different device structures are suggested for the low-bias and high-bias applications.