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The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

✍ Scribed by ZhiWei Bi; Qian Feng; JinCheng Zhang; Ling Lü; Wei Mao; WenPing Gu; XiaoHua Ma; Yue Hao

Book ID
107364161
Publisher
Science in China Press (SCP)
Year
2011
Tongue
English
Weight
433 KB
Volume
55
Category
Article
ISSN
1672-1799

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high‐tempera