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Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

✍ Scribed by Hinoki, Akihiro; Kikawa, Junjiroh; Yamada, Tomoyuki; Tsuchiya, Tadayoshi; Kamiya, Shinichi; Kurouchi, Masahito; Kosaka, Kenichi; Araki, Tsutomu; Suzuki, Akira; Nanishi, Yasushi

Book ID: 123619794
Publisher: Institute of Pure and Applied Physics
Year: 2007
Tongue: English
Weight: 190 KB
Volume: 1
Category: Article
ISSN: 1882-0778
DOI: 10.1143/APEX.1.011103

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