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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

✍ Scribed by Young Chul Choi; Milan Pophristic; Ho-Young Cha; Boris Peres; Michael G. Spencer; Lester F. Eastman

Book ID: 114618527
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 275 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.885679

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