✦ LIBER ✦
High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system
✍ Scribed by Ubukata, Akinori; Yano, Yoshiki; Shimamura, Hayato; Yamaguchi, Akira; Tabuchi, Toshiya; Matsumoto, Koh
- Book ID
- 121350495
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 565 KB
- Volume
- 370
- Category
- Article
- ISSN
- 0022-0248
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