AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

✍ Scribed by Yu, Xin-Xin; Ni, Jin-Yu; Li, Zhong-Hui; Kong, Cen; Zhou, Jian-Jun; Dong, Xun; Pan, Lei; Kong, Yue-Chan; Chen, Tang-Sheng

• Book ID: 121867954
• Publisher: Institute of Physics
• Year: 2014
• Tongue: English
• Weight: 764 KB
• Volume: 31
• Category: Article
• ISSN: 0256-307X
• DOI: 10.1088/0256-307X/31/3/037201