✦ LIBER ✦
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD
✍ Scribed by Yong Wang; NaiSen Yu; DongMei Deng; Ming Li; Fei Sun; KeiMay Lau
- Book ID
- 107363768
- Publisher
- Science in China Press (SCP)
- Year
- 2010
- Tongue
- English
- Weight
- 654 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1672-1799
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