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Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al[sub 2]O[sub 3] Dielectric

✍ Scribed by Li, Ning; Harmon, Eric S.; Hyland, James; Salzman, David B.; Ma, T. P.; Xuan, Yi; Ye, P. D.

Book ID: 120351310
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 618 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2908926

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