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Preparation of sapphire substrates for Gas phase GaN epitaxial processes

✍ Scribed by Dr. Zb. Kaliński

Publisher
John Wiley and Sons
Year
1977
Tongue
English
Weight
416 KB
Volume
12
Category
Article
ISSN
0232-1300

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## Abstract By using the hydride vapor phase epitaxy and a void‐assisted separation method, freestanding 3 inch GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 inches in diameter was easily separated from the