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Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

✍ Scribed by Yoshida, T. ;Oshima, Y. ;Eri, T. ;Watanabe, K. ;Shibata, M. ;Mishima, T.

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
170 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

By using the hydride vapor phase epitaxy and a void‐assisted separation method, freestanding 3 inch GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 inches in diameter was easily separated from the base substrate. No cracks were generated during the separation process, and the separation process was no more difficult than that of 2 inch GaN substrates. The dislocation density was of the order of 10^6^ cm^–2^. The carrier density was approximately 1 Γ— 10^18^ cm^–3^ and the mobility was 3.4 Γ— 10^2^ cm^2^ V^–1^ s^–1^. The concentrations of impurities, estimated by secondary‐ion mass spectrometry, were below the limit of detection, except for Si. The Si concentration was approximately 1 Γ— 10^18^ cm^–3^, which is in good agreement with the carrier density. (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca