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The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

✍ Scribed by Anatolij Govorkov; Alexsandr Donskov; Lev Diakonov; Yulia Kozlova; Sergej Malahov; Alexsandr Markov; Mikhail Mezhennyi; Vladimir Pavlov; Alexsandr Polykov; Tatiana Yugova

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 311 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.08.211

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