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Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

✍ Scribed by Yoshiki Kato; Shota Kitamura; Kazumasa Hiramatsu; Nobuhiko Sawaki

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 882 KB
Volume: 144
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)90448-0

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