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Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

✍ Scribed by Hiroshi Murakami; Tsunemori Asahi; Hiroshi Amano; Kazumasa Hiramatsu; Nobuhiko Sawaki; Isamu Akasaki

No coin nor oath required. For personal study only.

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