Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl
✦ LIBER ✦
Metalorganic Vapor Phase Epitaxy of GaN on LiGaO2 Substrates Using Tertiarybutylhydrazine
✍ Scribed by Pohl, U.W. ;Knorr, K. ;Bl�sing, J.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 122 KB
- Volume
- 184
- Category
- Article
- ISSN
- 0031-8965
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Subject classification: 73.61.Ey; 81.15.Kk; S7.14 One-, two-and three-flow metalorganic vapor phase epitaxy (MOVPE) methods have been compared in GaN growth, and each growth is analyzed by computational fluid dynamics (CFD). It is found that two-flow method shows better growth condition for achievin